发明名称 Resist composition and patterning process
摘要 A hydrogenated product of a ring-opening metathesis polymer comprising structural units as shown below has improved heat resistance, pyrolysis resistance and light transmission and is suited as a photoresist for semiconductor microfabrication using UV or deep-UV. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.
申请公布号 US6605408(B2) 申请公布日期 2003.08.12
申请号 US20010832919 申请日期 2001.04.12
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 NISHI TSUNEHIRO;KINSHO TAKESHI;NAGURA SHIGEHIRO;KOBAYASHI TOMOHIRO;WATANABE SATOSHI
分类号 C08F2/00;C08G61/06;C08G61/08;G03F7/039;(IPC1-7):C08F2/00 主分类号 C08F2/00
代理机构 代理人
主权项
地址