发明名称 |
Resist composition and patterning process |
摘要 |
A hydrogenated product of a ring-opening metathesis polymer comprising structural units as shown below has improved heat resistance, pyrolysis resistance and light transmission and is suited as a photoresist for semiconductor microfabrication using UV or deep-UV. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.
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申请公布号 |
US6605408(B2) |
申请公布日期 |
2003.08.12 |
申请号 |
US20010832919 |
申请日期 |
2001.04.12 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
NISHI TSUNEHIRO;KINSHO TAKESHI;NAGURA SHIGEHIRO;KOBAYASHI TOMOHIRO;WATANABE SATOSHI |
分类号 |
C08F2/00;C08G61/06;C08G61/08;G03F7/039;(IPC1-7):C08F2/00 |
主分类号 |
C08F2/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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