发明名称 |
Method reducing the effects of N2 gas contamination in an ion implanter |
摘要 |
A method for reducing a dinitrogen (N2) ion concentration in an ion implanter including providing an ion implanter having an ion source chamber for producing source ions said ion source chamber surrounded by a plurality of source magnets having a current supply for altering a position of said source ions; providing a gaseous source of material to the ion source chamber for ionization thereby creating a supply of source ions for implantation; creating a supply of source ions to include dinitrogen (N2) ions and nitrogen (N) ions supplied for implantation; and, increasing a current supply to at least one of the plurality of source magnets such that a ratio of dinitrogen (N2) ions to nitrogen (N) ions supplied for implantation is reduced.
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申请公布号 |
US6605812(B1) |
申请公布日期 |
2003.08.12 |
申请号 |
US20020080430 |
申请日期 |
2002.02.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
YEH SU-YU;CHEN CHI-BING;HUANG CHENG-YI;TSAI CHAO-JIE;CHEN LU-CHANG;LEE HSING-JUI |
分类号 |
H01J37/08;(IPC1-7):H01J37/08 |
主分类号 |
H01J37/08 |
代理机构 |
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主权项 |
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地址 |
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