Chemical treatment to strengthen photoresists to prevent pattern collapse

摘要

There is provided a method for forming a photoresist layer for photolithographic applications which has increased structural strength. The photoresist layer is exposed through a mask and developed. The photoresist layer is then reacted with a stabilizer agent to change its material properties before the photoresist layer is dried. Also provided are a semiconductor fabrication method employing a stabilizer-treated photoresist and a composition for a photoresist that strengthens when exposed to a stabilizer agent.