| 摘要 |
A pressure-contact type semiconductor device comprises a plurality of semiconductor elements (IGBTs) which are in pressure contact with one another, and in which first main electrodes are electrically connected to a first common main power source plate (pressure-contact type emitter electrode plate), and second main electrodes are electrically connected to a second common main power source plate (pressure-contact type collector electrode). The pressure-contact type semiconductor device also includes a common control signal board which is constituted by a printed circuit board or a multi-layered printed circuit board, and extends over spaces between rows of semiconductor elements, thereby forming a path for sending a control signal.
|
