发明名称 |
Semiconductor laser, semiconductor device, and their manufacture methods |
摘要 |
A substrate is made of SiC. A plurality of AlxGa1-xN patterns (0<=x<=1) is formed on a surface of the substrate and dispersively distributed in an in-plane of the substrate. An AlyGa1-yN buffer layer (0<=y<=1) covers the surface of the substrate and the AlxGa1-xN patterns. A laser structure is formed on the AlyGa1-yN buffer layer. Since the AlGaN buffer layer is grown by using the AlGaN patterns as seed crystals, a dislocation density of a predetermined region in the AlGaN buffer layer can be lowered. The characteristics of a laser structure can be improved by forming the laser structure above the region having a low dislocation density. Since the AlGaN pattern has electric conductivity, the device resistance can be suppressed from being increased.
|
申请公布号 |
US6606335(B1) |
申请公布日期 |
2003.08.12 |
申请号 |
US20010743636 |
申请日期 |
2001.01.12 |
申请人 |
FUJITSU LIMITED |
发明人 |
KURAMATA AKITO;HORINO KAZUHIKO |
分类号 |
H01S5/02;H01S5/32;H01S5/323;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|