| 摘要 |
A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1-xN/GaN alloy (X=0->1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.
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