| 摘要 |
A present semiconductor device includes a plurality of bump electrodes formed over a semiconductor substrate to allow signals to be input and output to and from a semiconductor element. After the formation of the bump electrodes an organic insulting film is coated on the whole surface of a resultant wafer structure, followed by a drying, a solidifying and an etch-back step. By so doing, a top area of the bump electrode is more projected than a top area of the organic insulating film. A lead is connected by a pressure and heat to the top area of the bump electrode.
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