| 摘要 |
PROBLEM TO BE SOLVED: To form a good protective film with a good reproducibility, and to provide a seed crystal for growing an SiC single crystal with which the deterioration of the crystal quality caused by the occurrence of voids is suppressed, an SiC single crystal ingot having a good appearance free from structural defects over the whole surface, and methods for producing them with good reproducibilities. SOLUTION: When the silicon carbide single crystal is grown by a sublimation recrystallization method using the seed crystal, an organic thin film having a thickness within a predetermined range is formed at the rear surface of the growth surface of the seed crystal. Thereby, the departure of atoms from the rear surface is suppressed during growth, and a high quality silicon carbide single crystal ingot having extremely less structural defects can be obtained. COPYRIGHT: (C)2003,JPO
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