发明名称 |
Manufacturing method of semiconductor devices by using dry etching technology |
摘要 |
There is provided a method of forming an interlayer insulating film having a dual-damascene structure, a contact hole and a deep trench mask using an organic silicon film. The shape of polysilane or the like is processed so that polysilane is used as an interlayer insulating film having a dual-damascene structure to control the shape and depth and prevent borderless etching which must be solved when a trench is formed. Polysilane and an insulating film are formed into a laminated structure so as to be integrated with each other after a dry etching step has been completed to easily form a contact hole having a high aspect ratio. The surface of polysilane is selectively formed into an insulating film so as to be used as a mask for use in a dry etching step. Polysilane for use as an anti-reflective film or an etching mask is changed to an oxide film or a nitride film so that films are easily removed. Hence it follows that a device region and a device isolation region of a densely integrated circuit can be smoothed, a self-aligned contact hole and metallization trench can be formed with a satisfactory manufacturing yield and the pattern of a gate electrode can be formed.
|
申请公布号 |
US6605542(B2) |
申请公布日期 |
2003.08.12 |
申请号 |
US20010995839 |
申请日期 |
2001.11.29 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SETA SHOJI;SEKINE MAKOTO;NAKAMURA NAOFUMI |
分类号 |
H01L21/302;H01L21/28;H01L21/3065;H01L21/311;H01L21/312;H01L21/336;H01L21/768;H01L29/78;(IPC1-7):H01L21/391 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|