| 摘要 |
Provided are methods for forming ferroelectric capacitors, which prevent decreasing ferroelectric characteristics due to the reaction of a ferroelectric layer with hydroxyl group induced from a inter-layer insulating film which will be formed and contacted with the ferroelectric layer after the formation of the ferroelectric capacitor. After a ferroelectric film such as Pb(Zr,Ti)O3 (PZT) is formed, a ZrO2 film, which is insulator and excellent in diffusion barrier characteristics, is formed so as to enclose the entire ferroelectric layer in order to prevent the damage generated by the reaction. The characteristics of the ferroelectric capacitor are enhanced by the invention.
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