发明名称 |
Planar finFET patterning using amorphous carbon |
摘要 |
An exemplary embodiment relates to a method of finFET patterning. The method can include patterning a fin structure above a substrate, forming amorphous carbon spacers along lateral sidewalls of the fin structure, depositing an oxide layer and polishing the oxide layer to expose top portions of the fin structure and the amorphous carbon spacers, removing amorphous carbon spacers, and depositing polysilicon where the amorphous carbon spacers were located.
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申请公布号 |
US6605514(B1) |
申请公布日期 |
2003.08.12 |
申请号 |
US20020237824 |
申请日期 |
2002.09.09 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
TABERY CYRUS E.;BELL SCOTT A.;DAKSHINA-MURTHY SRIKANTESWARA |
分类号 |
H01L21/336;H01L29/423;H01L29/786;(IPC1-7):H01L21/336;H01L21/476 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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