发明名称 |
Field-effect semiconductor device |
摘要 |
A field-effect semiconductor device includes a channel layer; a barrier structure formed on the channel layer and including a plurality of semiconductor layers; a plurality of ohmic electrodes formed above the barrier structure; and a Schottky electrode formed on the barrier structure between the ohmic electrodes. The barrier structure has an electron-affinity less than that of the channel layer and includes at least two heavily doped layers and a lightly doped layer provided therebetween.
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申请公布号 |
US6605831(B1) |
申请公布日期 |
2003.08.12 |
申请号 |
US20000659134 |
申请日期 |
2000.09.11 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
INAI MAKOTO;SASAKI HIDEHIKO |
分类号 |
H01L29/812;H01L21/338;H01L29/778;H01L29/80;(IPC1-7):H01L31/032;H01L31/033 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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