,申请号JP19930173554-传众专利搜索

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法人/股东/高管

发明名称
摘要	A method of producing a doped diamond, typically a boron doped diamond, is provided. The method involves multiple cold implantation/rapid annealing steps. A doped diamond can be produced containing a high concentration of dopant atoms.
申请公布号	JP3434852(B2)	申请公布日期	2003.08.11
申请号	JP19930173554	申请日期	1993.06.07
申请人		发明人
分类号	C30B29/04;C30B31/22;C30B33/00;H01L21/04;H01L21/265	主分类号	C30B29/04
代理机构		代理人
主权项
地址

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