| 摘要 |
PURPOSE: A piezoelectric switching device for high frequency is provided to drive effectively a switching element under a low driving voltage by using a MEMS(Micro-Electro Mechanical System) method. CONSTITUTION: A piezoelectric switching device for high frequency includes the first electrode(125), a piezoelectric layer(120), the second electrode(115), and a support layer(110). Both sides of the first electrode are loaded on a substrate. A center portion of the first electrode is horizontal to the substrate. The piezoelectric layer is formed on an upper portion of the first electrode. The second electrode is formed on an upper portion of the piezoelectric layer. The support layer is formed on an upper portion of the second electrode. A switch electrode(130) is arranged on a center portion of the first electrode. The switch electrode is formed with one selected from a group including aluminum, gold, platinum, tungsten, molybdenum, tantalum, platinum-tantalum, titanium, and platinum-titanium.
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