METHOD FOR LAPPING SIC WAFER USING PHOTOELECTRIC-CHEMICAL METHOD AND SIC SCHOTTKY BARRIER DIODE FABRICATED THEREBY

摘要

PURPOSE: A method for lapping an SiC wafer using a photoelectric-chemical method and an SiC Schottky barrier diode fabricated thereby are provided to improve a polishing speed and reduce the thickness of a semiconductor substrate within a short time by forming a porous layer on the semiconductor substrate by means of the photoelectric-chemical method. CONSTITUTION: An SiC wafer is dipped into HF mixed with water and H2O2 electrolyte before a lapping process for the SiC wafer is performed. A porous wafer forming process is performed by applying UV and a voltage to the SiC wafer. The H2O2 electrolyte has a concentration ratio of H2O2 : HF : H2O = 0.5-5: 1: 38. The voltage is about 2 to 20 volts and applied during 5 to 90 minutes.