| 摘要 |
PURPOSE: A non-volatile semiconductor memory device and a power-up read method thereof are provided to perform stably a power-up read operation by deciding the approach of a read voltage to a desired voltage. CONSTITUTION: A non-volatile semiconductor memory device includes a memory cell array(110), the first voltage detector, a read voltage generation circuit(200), a signal generation circuit, and a read circuit. The memory cell array includes plural memory cells which are arrayed in columns and rows. The first voltage detector is used for activating the first detection signal when a supply voltage approaches the first detection voltage during a power-up mode. The read voltage generation circuit is used for generating the read voltage in response to the first detection signal and activates the second detection signal when the read voltage approaches the second detection voltage. The signal generation circuit is used for generating a read start signal in response to the activation of the second detection signal. The read circuit is used for reading the data from the memory cell array in response to the read start signal.
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