发明名称 |
METHOD FOR MANUFACTURING MICROWAVE DEVICE |
摘要 |
PURPOSE: A method for manufacturing a microwave device is provided to improve the characteristics of the microwave device by increasing a thickness of a device pattern through a metal plating method to improve the coupling effect. CONSTITUTION: A seed metal layer(32) is formed on an upper portion of a quartz substrate(31). A ground electrode(34) is formed on a lower surface of the quartz substrate(31). A photo-resist(PR) is applied on an upper portion of the seed metal layer(32). The upper portion of the seed metal layer(32) is exposed and developed. A pattern for exposing a part of the upper portion of the seed metal layer(32) is formed. A metal layer(33) is grown on the exposed seed metal layer(32) by using an electric plating method to be formed a required microwave device pattern. The photo-resist(PR) pattern and the seed metal layer(32) on the lower portion thereof are sequentially removed.
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申请公布号 |
KR20030065894(A) |
申请公布日期 |
2003.08.09 |
申请号 |
KR20020005951 |
申请日期 |
2002.02.01 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
KIM, GI BYEONG;LEE, JONG CHEOL;PARK, JAE YEONG |
分类号 |
H01P11/00;(IPC1-7):H01P11/00 |
主分类号 |
H01P11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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