METHOD OF FORMING INTERLAYER DIELECTRIC IN SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method of forming an interlayer dielectric in a semiconductor memory device is provided to prevent fall-down of a metal line formed at the edge of a cell block by reducing step difference of an interlayer dielectric between a cell region and the nearest peripheral region. CONSTITUTION: A storage pole and a plate pole are formed on a cell region for semiconductor memory. A peripheral circuit is formed on a peripheral region. An interlayer dielectric(BPSG)(20) is deposited on the resultant structure. CMP is performed to planarize a portion of the interlayer dielectric in the cell region. A BPSG reflow process is carried out to densify the interlayer dielectric.