发明名称 ETCHING APPARATUS
摘要 PURPOSE: An etching apparatus is provided to minimize the generation of particles by preventing the damage of a through-hole for reaction gas. CONSTITUTION: An etching apparatus includes a chamber, a gas supply portion(22), and a base material(26). The chamber is used for etching a processing target by using plasma. The gas supply portion is formed with a metallic material. The gas supply portion has a through-hole(24) to supply a reaction gas to the chamber. The base material is formed with a plastic material and arranged on a wall of the through-hole. The base material is used for preventing the damage of the wall of the through-hole. The metal material includes aluminum. The plastic material includes an engineering plastic material. The processing target is formed with a photoresist layer.
申请公布号 KR20030065709(A) 申请公布日期 2003.08.09
申请号 KR20020005441 申请日期 2002.01.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, NAM GYU;KIM, SEOK HAN;MIN, YEONG MIN;PARK, SEONG RYONG
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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