PURPOSE: An etching apparatus is provided to minimize the generation of particles by preventing the damage of a through-hole for reaction gas. CONSTITUTION: An etching apparatus includes a chamber, a gas supply portion(22), and a base material(26). The chamber is used for etching a processing target by using plasma. The gas supply portion is formed with a metallic material. The gas supply portion has a through-hole(24) to supply a reaction gas to the chamber. The base material is formed with a plastic material and arranged on a wall of the through-hole. The base material is used for preventing the damage of the wall of the through-hole. The metal material includes aluminum. The plastic material includes an engineering plastic material. The processing target is formed with a photoresist layer.
申请公布号
KR20030065709(A)
申请公布日期
2003.08.09
申请号
KR20020005441
申请日期
2002.01.30
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, NAM GYU;KIM, SEOK HAN;MIN, YEONG MIN;PARK, SEONG RYONG