| 摘要 |
PROBLEM TO BE SOLVED: To provide a pn junction diode in which the variation of a forward voltage drop (VF) is reduced. SOLUTION: The method for manufacturing a pn junction diode in which a defect region is formed in a cathode layer comprises a step of preparing a semiconductor wafer having an n-type cathode layer, a step of forming a p-type anode layer on the cathode layer so that an interface between the cathode layer and the anode layer is a pn junction surface, and a defect region forming step of forming a defect region in the anode layer near the pn junction region by ion-implanting in the anode layer. In this method, the defect region forming step includes steps of simultaneously ion-implanting ions having different mean projection ranges Rp, alternatively forming first and second ion implanted regions adjacently, partly superposing the concentration distribution of the crystal defect formed in the first and second ion-implanted regions, and forming the defect regions of substantially constant film thicknesses. COPYRIGHT: (C)2003,JPO
|
