| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same in which gettering action is imparted to an active silicon layer in an SOI wafer and a lifetime killer atom is dispersively introduced as needed, and to provide the semiconductor device which uses the SOI wafer and which has both a power output unit and a controller in the same substrate. SOLUTION: The semiconductor device comprises an insulating layer and the active silicon layer provided on a silicon layer, a plurality of trenches formed in the active silicon layer, and a gettering layer provided on the side wall of the trench so that the lifetime killer atom is dispersively introduced from the side wall into the active silicon layer. The power output unit and the controller of the obtained semiconductor device are made to co-exist in the same substrate. COPYRIGHT: (C)2003,JPO
|
