SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has low contact resistance and its manufacturing method.

SOLUTION: On the top surface of a p-type silicon substrate 1, an n-type source/drain region 4 is formed. An inter-layer insulating layer 9 is formed which has a contact hole 9a reaching the n-type source/drain region 4. A doped polysilicon layer 30 is so formed as to come into contact with the n-type source/ drain region 4 through the contact hole 9a and have an extension part extending onto the inter-layer insulating layer 9. A titanium silicide layer 31 is formed in contact with only the extension part of the doped polysilicon layer 30.

COPYRIGHT: (C)2003,JPO