| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a highly reliable DRAM hybrid semiconductor device in which a good metal silicide layer capable of suppressing junction leak and channel leak of a transistor is formed on a lightly doped diffusion layer of the source-drain region at a DRAM part, and wiring resistance and contact resistance are reduced by increasing the area of the metal silicide layer. <P>SOLUTION: After a thin oxide film sidewall 15 is formed on the sidewall of the gate electrode 13 and before a nitride film sidewall 16 is formed on the outside thereof, a silicon epi-layer 18a is formed and then a metal silicide layer 18 is formed from the silicon epi-layer 18a by a salicide method. <P>COPYRIGHT: (C)2003,JPO |
