METHOD FOR MANUFACTURING SILICON WAFER AND SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon wafer having excellent GOI characteristics by reducing faults due to a residual working caused defect or the like caused by mechanical working such as polishing and a residual crystal defect with an OSF used as a nucleus, and to provide the silicon wafer. SOLUTION: The method for manufacturing the silicon wafer comprises a step of heat-treating such as quick heating or quick cooling the silicon wafer cut out from a perfect region containing a perfect region P in which an aggregate of interstitical silicon type point defects of a silicon single crystal ingot and an aggregate of hole type point defects do not exist and a region R in which a ring-like oxide inductive laminate defect occurs in hydrogen, argon or their mixture gas atmosphere. COPYRIGHT: (C)2003,JPO