| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor wafer having a single-sided mirror finished surface wherein both flatness of SFQR or the like and nanotopography can be improved. SOLUTION: In the method for manufacturing the semiconductor wafer having the single-sided mirror finished surface, a surface of the semiconductor wafer is subjected to primary polishing while the semiconductor wafer is subjected to soft chucking by using single-sided sheet polishing equipment. After that, distribution of thickness of the semiconductor wafer or distribution of unevenness of the back of the wafer is measured. A thick part in the back of the semiconductor wafer is selectively plasma-etched on the basis of data of distribution of thickness, or an uneven part in the back of the semiconductor wafer is selectively etched on the basis of data of distribution of unevenness, and the back is flattened. After that, the surface of the semiconductor wafer is polished for finishing while the semiconductor wafer is subjected to soft chucking by using the single-sided sheet polishing equipment. COPYRIGHT: (C)2003,JPO
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