| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a gas sensor with stable detecting performance that can suppress heat dissipation from a substrate and efficiently heat a solid electrolyte, and use a power source such as a battery at low power consumption. <P>SOLUTION: A heater 2 is formed by ion-implanting to the silicon substrate 1 of the single crystal of an n-type (100) surface and thereafter an oxide film 1a composed of silicon oxide that is anisotropically etched with photolithography is removed. A cavity 18 is formed by anisotropically etching the silicon substrate 1, and the solid electrolyte 3 is formed on an oxide film 1b, and then a pair of electrodes 21, 22 are formed on the oxide film 1b. Heat dissipation from the silicon substrate 1 is suppressed and the solid electrolyte 3 is efficiently heated. Therefore, the low power consumption is realized and the power source such as the battery can be used. <P>COPYRIGHT: (C)2003,JPO |
