| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a display device with excellent display characteristics. <P>SOLUTION: The display device is provided with a substrate with an insulating surface, a thin film transistor formed on the substrate and having a channel forming region, source and drain regions, a gate insulating film formed close to the channel forming region and a gate electrode formed close to the gate insulating film, an organic resin film formed on the thin film transistor and an electrode formed on the organic resin film and electrically connected to the thin film transistor through a hole formed on the organic resin film and is characterized by having crystalline silicon in the channel forming region and exhibiting a peak of a Raman spectrum on the frequency side lower than 522 cm<SP>-1</SP>. <P>COPYRIGHT: (C)2003,JPO</p> |
