发明名称 CRYSTAL DEVICE AND PRODUCTION METHOD FOR THE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a crystal device, which will not degrade conductivity due to silicon conductivity adhesive member at a junction section with a base substrate and simultaneously obtains stable, proper electrical characteristics even in excitation electrodes. SOLUTION: After drawer electrodes and exciting electrodes are formed at a crystal vibrator 3, at least only extraction electrodes 32 and 34 of the lower surface side are heated locally by hot-blast radiation or heater heating, and metal in a surface metal layer is deposited at the surface of an AU layer as a surface deposit layer, then it is accommodated and held for curing, at the lower surface of the base substrate using silicon conductivity adhesive. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003224442(A) 申请公布日期 2003.08.08
申请号 JP20020020153 申请日期 2002.01.29
申请人 KYOCERA CORP 发明人 KAWAMURA KIMIHARU
分类号 H03H9/02;H03H3/02;H03H9/19;(IPC1-7):H03H9/02 主分类号 H03H9/02
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