| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal oxide semiconductor field-effect transistor element in which the decrease is suppressed in the driving force due to the contact resistance R(slc) component of a diffusion layer/silicide layer following the reduction in the thickness of a SOI layer and the reduction in the distance X between a contact and a SW end. SOLUTION: The distance X between the contact and the SW end satisfies the relation by the following expression (1). Expression (1): R(slc)×10<SP>6</SP>×(1+Tslc/ Tsoi)≤X≤200/rs. In the expression (1), X represents the shortest distance (μm) between the faces of a contact wire 18 and a SW 24 facing each other. R(slc) represents the contact resistance (Ω.cm<SP>2</SP>) of the interface between a silicide layer 16 and a diffusion layer 14. Tslc represents the thickness (μm) of the silicide layer 16. Tsoi represents the thickness (μm) of a silicon layer 12, rs represents the series resistance (Ω/cm<SP>2</SP>) of the silicide layer 16. COPYRIGHT: (C)2003,JPO
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