| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent a leak current from being generated and is highly reliable. SOLUTION: The semiconductor device 100 has a silicon substrate 101 which has a main surface 101f and includes a trench 107 formed in the main surface 101f. The trench 107 is prescribed by surfaces including a bottom surface 107b, a flank 107s which connects with the bottom surface 107b and has a 1st inclination to the main surface 101f, and an intermediate surface 101c which is formed between the main surface 101f and bottom surface 107b and has a 2nd inclination less than the 1st inclination to the main surface 101f. Further, the semiconductor device 100 has an n-type impurity region 121. COPYRIGHT: (C)2003,JPO
|
