EPITAXIAL WAFER FOR FIELD EFFECT TRANSISTOR USING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR AND FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To obtain an epitaxial wafer for a GaN field effect transistor in which a defect is less in one time growth on a sapphire substrate and which has high gate-drain resistance. SOLUTION: The epitaxial wafer for the field effect transistor comprises an InGaN low-temperature deposit layer 5 provided on the sapphire substrate 6, and GaN field effect transistor structures 1 to 3 provided on the layer 5 via a GaN buffer layer 4. In this wafer, an In composition x of the InxGa1-xN low-temperature deposit layer is set to 0