| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film capacitor wherein insulation of a thin film dielectric material layer is not easily broken due to a defect of an upper electrode layer deposited and formed on the thin film dielectric material layer. SOLUTION: In a thin film capacitor where a lower electrode layer 2, a thin film dielectric material layer 3 and an upper electrode layer 4 are sequentially formed on a supporting substrate 1, the shape at the end face of the upper electrode layer 4 is formed almost in the sine-wave shape. COPYRIGHT: (C)2003,JPO
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