| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor epitaxial growth method capable of reducing the dispersion of the intra-plane distribution of HEMT device characteristics even when dimension accuracy and working accuracy of a soaking plate are bad, the device and the soaking plate used for that. SOLUTION: For the vapor epitaxial growth method, the device and the soaking plate used for that, a semiconductor substrate 1 and the soaking plate 20 for stabilizing the intra-plane temperature uniformity of the semiconductor substrate arranged on the back surface side of the semiconductor substrate 1 are arranged and housed inside a growing furnace, and a gaseous starting material for growth and a gas for dilution are supplied to the surface side of the semiconductor substrate 1 and crystal grown. The soaking plate 20 is arranged with a prescribed interval (g) from the semiconductor substrate 1. COPYRIGHT: (C)2003,JPO
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