| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser in which the aspect ratio of beam radiation angle is decreased without the sacrifice of reliability at the time of high output oscillation. SOLUTION: At least a first conductivity type AlGaAs lower clad layer 4, a first conductivity type InGaP or InGaAlP low refractive index layer 5 having a refractive index sufficiently lower than that of the clad layer 4 and lattice-matching with GaAs, an AlGaAs lower optical waveguide layer 6, a GaAs or AlGaAs barrier layer 7, an AlGaAs, InGaAs or InGaAsP quantum well layer 8 having a band gap smaller than that of the barrier layer 7, a GaAs or AlGaAs barrier layer 9, an AlGaAs upper optical waveguide layer 10, a second conductivity type AlGaAs upper clad layer 11, and a second conductivity type GaAs contact layer 12, are formed sequentially on a first conductivity type GaAs substrate 1. COPYRIGHT: (C)2003,JPO
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