| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element exhibiting high kink-free power by a stabilized transverse mode and having stabilized characteristics for temperature. SOLUTION: The semiconductor laser element has n-type and p-type waveguide layers formed to sandwich an active layer, n-type and p-type clad layers formed to sandwich these waveguide layers, and a current block layer defining a stripe current injection region extending in the direction connecting the front edge for emitting laser light and the opposing rear edge wherein only the zero-order of transverse mode in the film thickness direction is allowed both on the inside and outside of the stripe. COPYRIGHT: (C)2003,JPO
|
