发明名称 TEMPERATURE DETECTOR, SEMICONDUCTOR DETECTING DEVICE, AND METHOD OF MANUFACTURING TEMPERATURE DETECTOR
摘要 PROBLEM TO BE SOLVED: To provide a temperature detector that is small in size, high in sensitivity, and small in thermal time constant. SOLUTION: This temperature detector detects the temperature change of a temperature detecting section 20 provided with a P-N junction element by using the section 20. This detector includes a substrate 1, the temperature detecting section 20 supported by supporting legs on the substrate 1, and a P-N junction element 30 which is disposed in the section 20 and in which P-type semiconductor layers and N-type semiconductor layers are alternately disposed. The detector also includes a wiring layer 3 which fetches electric signals from the element 30 by applying an operating voltage between both ends of the element 30. Under the condition where the operating voltage is applied between both ends of the element 30, a tunnel current flows through the P-N junction face of the element 30 upon which a reverse voltage is impressed. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003224260(A) 申请公布日期 2003.08.08
申请号 JP20020023658 申请日期 2002.01.31
申请人 MITSUBISHI ELECTRIC CORP 发明人 OTA YASUAKI;UENO MASAFUMI
分类号 G01J1/02;G01J5/20;H01L21/822;H01L27/04;H01L29/74;(IPC1-7):H01L29/74 主分类号 G01J1/02
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