发明名称 DEVICE AND METHOD FOR CONTROLLING ACTIVE TERMINATION RESISTOR IN MEMORY SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a controller and a method for an active termination resistor which can perform on/off control of the active termination resistor of DRAM regardless of operation mode of DRAM mounted on a memory module. SOLUTION: A buffer circuit included in a memory circuit is equipped with a signal input terminal, a synchronous input buffer having an input terminal connected to the signal input terminal, an asynchronous input buffer having an input terminal connected to the signal input terminal, and a switching circuit outputting selectively an output signal from the synchronous input buffer or the output signal from the asynchronous input buffer according to the operation mode in the memory circuit. A device and method for controlling the active termination resistor can minimize the data bubble as they can perform on/off control of the terminal resistor regardless of the operation mode of the delay synchronous loop or the phase synchronous loop. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003223784(A) 申请公布日期 2003.08.08
申请号 JP20020305034 申请日期 2002.10.18
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KYUNG KYE-HYUN
分类号 G06F12/00;G06F13/16;G11C7/10;G11C11/401;G11C11/4076;G11C11/4093;H03K17/687;H03K19/0175;(IPC1-7):G11C11/401;H03K19/017 主分类号 G06F12/00
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