| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To miniaturize a semiconductor device. <P>SOLUTION: Six semiconductor elements 23 formed of MOS transistors are built in a semiconductor module 21, for instance, P electrodes 24 connected to the drain electrodes of the upper arm-side (on the left side in Fig. 1) semiconductor elements 23 and N electrodes 25 connected to the source electrodes of the lower arm-side (on the right side in Fig. 1) are inserted into the center side 22a of a case 22. Three AC electrodes 26, 27, and 28 outputting three-phase AC voltages U, V, and W are inserted into the same center side 22a as they are partially sandwiched between the P electrodes 24 and N electrodes 25 and insulated from the electrodes 24 and 25. The P electrodes and N electrodes, and the AC electrodes 26 to 28 are arranged as they are spanning above the board mounted with the semiconductor elements 23. <P>COPYRIGHT: (C)2003,JPO</p> |
