发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To obtain desired circuit characteristics by realizing a layout arrangement, in which symmetry is taken into consideration for each semiconductor device constituting a circuit block. SOLUTION: Emitter follower circuits 23 and 24 are arranged near a differential amplifier 21, and each emitter follower circuit is arranged at a position of line symmetry for the central line of the differential amplifier 21. Bipolar transistors Q<SB>24</SB>and Q<SB>25</SB>, constituting the emitter follower circuits 23 and 24, are arranged near bipolar transistors Q<SB>21</SB>and Q<SB>22</SB>constituting the differential amplifier 21, and the bipolar transistors Q<SB>24</SB>and Q<SB>25</SB>are arranged at direction of 90 degrees different from each other. According to this arrangement, crossing is eliminating among wiring inputted from the differential amplifier 21 to the emitter follower circuits 23 and 24, and symmetry for a differential amplifier 1 including the emitter follower circuits 23 and 24 is improved to enhance circuit characteristics, because of employing equal wiring length. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003224438(A) 申请公布日期 2003.08.08
申请号 JP20020300140 申请日期 2002.10.15
申请人 SANYO ELECTRIC CO LTD 发明人 SHIINA MASAHIRO
分类号 H03F3/45;(IPC1-7):H03F3/45 主分类号 H03F3/45
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