| 摘要 |
PROBLEM TO BE SOLVED: To provide a waste gas processing method for a semiconductor manufacturing device so as to inexpensively and easily remove harmful polyfluoride compound gas used for a cleaning or etching processing inside a processing chamber in a plasma CVD device and a plasma etching device. SOLUTION: A periodical plasma cleaning processing is performed inside the processing chamber 10 for high quality film formation. At the time, as a cleaning gas, the one for which O (oxygen) is incorporated in the polyfluoride compound gas such as CF<SB>4</SB>, C<SB>2</SB>F<SB>6</SB>and C<SB>4</SB>F<SB>8</SB>is used. For instance, O<SB>2</SB>gas is added to attain C<SB>4</SB>F<SB>8</SB>O gas. In plasma cleaning, a fluorine radical decomposed by plasma is bonded with O (oxygen) incorporated beforehand before being bonded with C (carbon). Thus, discharge is not performed in the form of PFC gas as it is to the outside of the processing chamber. COPYRIGHT: (C)2003,JPO
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