发明名称 PLASMA PROCESSOR, ELECTRODE MEMBER, MANUFACTURING METHOD FOR BAFFLE PLATE, PROCESSOR AND SURFACE TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide an excellently insulated plasma treatment device and an electrode member. SOLUTION: The connection part with a feeding rod 35 of an upper electrode 28 connected through the feeding rod 35 to a second high frequency power source 37 and capable of impressing high frequency power, and the surface of the feeding rod 35, are covered with an insulation film 41. The insulation film 41 is formed by thermally spraying an insulating material such as PTFE to the surface of the feeding rod 35 or the like. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003224077(A) 申请公布日期 2003.08.08
申请号 JP20020021829 申请日期 2002.01.30
申请人 TOKYO ELECTRON LTD 发明人 FUJISATO TOSHIAKI
分类号 C23C16/505;C23C4/04;C23C16/44;H01J37/32;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/505
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