发明名称 DRIVE CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To reduce a leakage current of a basic drive element connected to a switching transistor. <P>SOLUTION: The characteristics related to current drive capabilities of a first switching transistor Tr1 and a second switching transistor Tr2, serially connected between a data line 16 and the gate electrode of a third transistor Tr3 for driving a diode 12 are differentiated from each other. By increasing the holding characteristic of either the first transistor Tr1 or the second transistor Tr2, as well as increasing the current drive capability of the other transistor, the two serially connected transistors reduce the leakage current. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003224461(A) 申请公布日期 2003.08.08
申请号 JP20020020547 申请日期 2002.01.29
申请人 SANYO ELECTRIC CO LTD 发明人 MATSUMOTO SHOICHIRO
分类号 G02F1/1368;G09F9/30;G09G3/20;G09G3/30;G09G3/32;G09G3/36;H01L21/822;H01L27/04;H01L51/50;H03K19/0175 主分类号 G02F1/1368
代理机构 代理人
主权项
地址