| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which the variation of the cross-sectional shape of a gate electrode can be reduced and, in addition, the impurity concentration in the gate electrode can be set independently of the impurity concentration in source and drain regions. SOLUTION: The gate electrode composed of a semiconductor is formed in a partial area on the surface of a semiconductor substrate. Then impurities are injected into the gate electrode after forming a mask member in the adjacent area of the gate electrode on the surface of the substrate. After the impurities are injected, the mask member is removed. Thereafter, the source and drain regions are formed by injecting impurities into the surface layer of the substrate on both side of the gate electrode. COPYRIGHT: (C)2003,JPO
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