| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a transistor by which short-channel effects and reverse short-channel effects can be reduced. SOLUTION: After a first oxide film is formed in the trench of a substrate 100 containing a pad oxide film and a silicon nitride film and an insulating spacer is formed on the oxide film, an insulating pattern is formed in the trench and the pad oxide film is exposed by etching the silicon nitride film, insulating pattern, and insulating spacer. Then the exposed pad oxide film, insulating spacer, and first oxide film are removed and a source 120, a drain 122, and LDDs 124 are formed in this order on the substrate 100 on both sides of the trench and on both lower sides of the insulating pattern. Thereafter, a second oxide film 136 is formed on the substrate 100 containing the source 120 and drain 122, and channel stop layers 130 are formed between the LDDs 124. In addition, a punch stop layer 128 is formed below the layers 130 and a gate insulating film 132 and a gate 134 are formed in this order in the trench. COPYRIGHT: (C)2003,JPO
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