| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose stacked diffusion layer can be accurately formed at a relatively low temperature and by which the short channel effect can be prevented. SOLUTION: A gate electrode 105 including a field oxide film 102 and a first silicon oxide film 104 is formed on a silicon substrate 101. Then a polycrystalline silicon film 108 is formed and its unnecessary parts are polished and removed by a chemical and mechanical polishing method until the first silicon oxide film 104 is exposed. The thickness A of the polycrystalline silicon film 108 near the edges of the gate electrode 105 is made larger than the thickness B of its other parts. COPYRIGHT: (C)2003,JPO
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