| 摘要 |
PROBLEM TO BE SOLVED: To provide an SOI wafer manufacturing method which is capable of preventing particles from occurring in an SOI wafer manufacturing process or a device manufacturing process, and an SOI wafer. SOLUTION: An SOI wafer 16 is equipped with a base wafer 11, an insulating film 12 formed on the surface of the base wafer 11, and an SOI layer 13 formed on the surface of the insulating film 12. The SOI wafer characterized by the fact that the external peripheral edge of the SOI layer 13 is linked to the surface of the base wafer 11 and the other SOI wafer characterized by the fact that the external peripheral edge of the SOI layer 13 is equipped with an overhang 21 that extends outward beyond the external peripheral edge of the adjacent insulating film 12 are manufactured. The SOI wafer equipped with the overhang 21 is subjected to a thermal treatment in an atmosphere of a hydrogen gas, an inert gas or a mixed gas of them, whereby the SOI wafer where the external peripheral edge of the SOI layer is linked to the surface of the base wafer 11 can be manufactured. COPYRIGHT: (C)2003,JPO
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