发明名称 SUBSTRATE PROCESSOR
摘要 PROBLEM TO BE SOLVED: To shorten a temperature stabilizing period at transition from temperature elevation step to fixed temperature step. SOLUTION: An RTP device is provided with a susceptor 26 supporting a wafer 1, a temperature measuring device 53 measuring the temperature of the wafer 1, a first heating lamp group 31 heating the wafer 1, and a second heating lamp group 40 composed of heating lamps 41 whose output is smaller than the one of the heating lamp 32 of the first heating lamp group 31. The wafer 1 is heated by the first heating lamp group 31 at the time of the temperature elevation step, and the first heating lamp group 31 is switched to the second heating lamp group 40 at transition from the temperature elevation step to a fixed temperature step. Thus, since the period of the temperature elevation step is shortened by performing heating by the first heating lamp group of large output, and temperature control following fine temperature fluctuation is secured by performing heating by the second heating lamp group of small output after shifting to the fixed temperature step, the period until the temperature is stabilized is shortened and the throughput of the RTP device is improved. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003224078(A) 申请公布日期 2003.08.08
申请号 JP20020023392 申请日期 2002.01.31
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 KOGANO MINORU;YANAGISAWA AKIHIKO
分类号 H05B3/00;H01L21/205;H01L21/26;(IPC1-7):H01L21/205 主分类号 H05B3/00
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