METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the crystallinity of a crystalline semiconductor film formed by crystallizing an amorphous semiconductor film and to provide a TFT capable of being operated at a higher speed. SOLUTION: A method is provided with respective stages of forming the crystalline semiconductor film 506 by adding a metallic element to the amorphous semiconductor film 503 formed on an insulating surface and solid-phase crystallizing it by a heating treatment, forming a fused zone by irradiating it with a continuously supplied energy beam 508 while leaving the metallic element on the crystalline semiconductor film as it is, and reforming the crystallinity of the crystalline semiconductor film by scanning the fused zone. COPYRIGHT: (C)2003,JPO