MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistive RAM which adjusts an amount of electric current flowing from a drain region to a source region depending on the amount of the electric current flowing through an MTJ of an MRAM cell in accordance with a wordline voltage size and reads two or more multiple data. SOLUTION: To achieve the above goals, the magnetoresistive RAM in this invention is connected to a bitline and equipped with a multiple data detector circuit to detect the multiple data based on difference of a direction of magnetic polarization after the electric current transmitted from the MRAM cell connected to the above bitline is converted to voltage. COPYRIGHT: (C)2003,JPO