发明名称 |
Charge coupled device and production thereof |
摘要 |
A charge coupled device of the present invention includes a charge transfer region layer and a gate insulation film that are formed in the stated order on a semiconductor substrate, first gate electrodes formed at predetermined spaces on the gate insulation film, and second gate electrodes arranged between the first gate electrodes with at least silicon oxide films being interposed therebetween. Each silicon oxide film has constricted portions where the silicon oxide film is in contact with the gate insulation film, and electric insulation films are formed on the constricted portions so as to form sidewalls. This configuration decreases the charge transfer efficiency and increases a dielectric breakdown voltage between gate electrodes. Thus, a charge coupled device having high performance and high dielectric strength is provided.
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申请公布号 |
US2003146471(A1) |
申请公布日期 |
2003.08.07 |
申请号 |
US20030354700 |
申请日期 |
2003.01.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TANAKA HIROSHI;HENMI KEN |
分类号 |
H01L29/762;H01L21/00;H01L21/339;H01L27/146;H01L27/148;H01L29/04;H01L29/76;H01L29/768;H01L31/036;H01L31/0376;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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